Effect of kinetics on the nucleation of thin InAs films on InP by chemical beam epitaxy

Author

Cotta, M.A. ; De Mendonça, C. A C ; Ito-Landers, K.M. ; de Carvalho, M.M.G. ; Martin, R.B.

Author_Institution

Inst. de Fisica Gleb Wataghin, Univ. Estadual de Campinas, Sao Paulo, Brazil

fYear

1996

fDate

21-25 Apr 1996

Firstpage

537

Lastpage

540

Abstract

We present a study on the nucleation of thin InAs films on InP by chemical beam epitaxy. Analysis by atomic force microscopy shows that the islanding process is kinetically-controlled; the onset of this process and the island shape are also dependent on the misorientation of the substrate. The island distribution along step edges prior to vertical growth indicates the existence of a step edge barrier altering the diffusion dynamics on the surface

Keywords

III-V semiconductors; atomic force microscopy; chemical beam epitaxial growth; indium compounds; island structure; nucleation; photoluminescence; semiconductor growth; surface diffusion; InAs; InP; InP substrate misorientation; atomic force microscopy; chemical beam epitaxy; island distribution; islanding process; kinetics; nucleation; photoluminescence; step edges; surface diffusion dynamics; thin InAs films; vertical growth; Atomic force microscopy; Chemicals; Epitaxial growth; Indium phosphide; Kinetic theory; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492302

Filename

492302