Title :
Effect of kinetics on the nucleation of thin InAs films on InP by chemical beam epitaxy
Author :
Cotta, M.A. ; De Mendonça, C. A C ; Ito-Landers, K.M. ; de Carvalho, M.M.G. ; Martin, R.B.
Author_Institution :
Inst. de Fisica Gleb Wataghin, Univ. Estadual de Campinas, Sao Paulo, Brazil
Abstract :
We present a study on the nucleation of thin InAs films on InP by chemical beam epitaxy. Analysis by atomic force microscopy shows that the islanding process is kinetically-controlled; the onset of this process and the island shape are also dependent on the misorientation of the substrate. The island distribution along step edges prior to vertical growth indicates the existence of a step edge barrier altering the diffusion dynamics on the surface
Keywords :
III-V semiconductors; atomic force microscopy; chemical beam epitaxial growth; indium compounds; island structure; nucleation; photoluminescence; semiconductor growth; surface diffusion; InAs; InP; InP substrate misorientation; atomic force microscopy; chemical beam epitaxy; island distribution; islanding process; kinetics; nucleation; photoluminescence; step edges; surface diffusion dynamics; thin InAs films; vertical growth; Atomic force microscopy; Chemicals; Epitaxial growth; Indium phosphide; Kinetic theory; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface roughness;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492302
