Title :
Cu / Barrier Metal Stack Film Characterization for Reliability Estimation
Author :
Ogawa, Shinichi ; Ohdaira, Toshiyuki ; Hosoi, Nobuki ; Tarumi, Nobuaki ; Suzuki, Ryoichi ; Saito, Shuichi
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba
Abstract :
Elapsed time change in sheet resistance (SR) of Cu/barrier metal stacks have been evaluated correlated with behaviors of vacancies in Cu films at Cu/barrier interface areas (Cu barrier interfaces) by a positron-annihilation lifetime spectroscopy (PALS), and it was shown that the elapsed time change in SR strongly related to positron mean lifetime, namely vacancy clusters size, and those film properties showed a reasonable correlation with a reported SIV characteristics.
Keywords :
copper; interconnections; low-k dielectric thin films; positron annihilation; reliability; Cu-barrier metal stack film; Cu-low-k interconnect; film properties; positron mean lifetime; positron-annihilation lifetime spectroscopy; reliability estimation; sheet resistance; vacancy clusters size; Annealing; Lead compounds; Metals industry; Positrons; Probability density function; Semiconductor device reliability; Semiconductor films; Strontium; Temperature measurement; Transistors;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382339
