Title :
Meander type LPE-new approach to growth InP and GaInAsP layers
Author :
Nohavica, D. ; Gladkov, P. ; Lourenco, M.A. ; Yang, Z. ; Homewood, K.P. ; Ehrentraut, D.
Author_Institution :
Inst. of Radio Eng. & Electron., Czechoslovak Acad. of Sci., Prague, Czech Republic
Abstract :
The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga.21In.79As.75P.25 were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth
Keywords :
III-V semiconductors; crystal morphology; gallium arsenide; gallium compounds; indium compounds; interface structure; liquid phase epitaxial growth; semiconductor growth; semiconductor heterojunctions; (100) orientation; Ga.21In.79As.75P.25; GaInAsP; GaInAsP-InP; GaInAsP/InP material system; InP; InP growth; InP substrates; composition; epitaxial technique; growth interfaces; liquid phase epitaxy; meander type LPE; meander type technique; perpendicular lattice mismatch; quaternary solid solution; quaternary strained layers; surface morphology; Delta modulation; Epitaxial growth; Indium phosphide; Lattices; Samarium; Solids; Substrates; Surface morphology; Testing; Transient analysis;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492308
