Title :
Strain-compensated MBE grown AlGaInAs/AlGaInAs/InP QWs for photonic devices
Author :
Hillmer, H. ; Lösch, R. ; Schlapp, W. ; Steinhagen, F. ; Burkhard, H.
Author_Institution :
Deutsche Bundespost Telekom, Darmstadt, Germany
Abstract :
Strain compensated QW samples with compressively strained wells and tensile strained barriers have been grown by MBE and studied by low temperature photoluminescence. The PL linewidths are narrow, decrease with growing well widths, and increase only weakly with rising number of wells
Keywords :
aluminium compounds; gallium arsenide; indium compounds; internal stresses; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line breadth; spectral line intensity; AlGaInAs-AlGaInAs-InP; MBE; PL linewidths; compressively strained wells; low temperature photoluminescence; photonic devices; strain compensated QW samples; strain-compensated MBE grown AlGaInAs/AlGaInAs/InP QWs; tensile strained barriers; well widths; Capacitive sensors; Indium phosphide; Laser applications; Laser modes; Lattices; Molecular beam epitaxial growth; Optical materials; Optoelectronic devices; Quantization; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492310
