DocumentCode :
2963570
Title :
Development of an Eco-friendly Copper Interconnect Cleaning Process
Author :
Uozumi, Yoshihiro ; Nakajima, Takahito ; Matsumura, Tsuyoshi ; Yoshimizu, Yasuhito ; Tomita, Hiroshi
Author_Institution :
Toshiba Corp., Yokohama
fYear :
2007
fDate :
4-6 June 2007
Firstpage :
25
Lastpage :
27
Abstract :
This paper reports the development of an eco-friendly, low-cost and clean wet cleaning process in forming copper interconnections, especially on a copper surface at the bottom of the via. From analysis and electrical data, the components of post-etch residues are mainly formed by copper fluorides, copper oxides and silicon oxides. Therefore, diluted inorganic acid solutions are used to remove these polymers and a diluted amine solution is used to stabilize the copper surface after cleaning. These chemicals are treated by an effluent treatment facility, and are very cheap and clean. In the results of post-cleaning, the analysis data shows that the residues are removed, and the electrical data such as via chain yield, electro migration, etc., shows good performance.
Keywords :
copper; effluents; etching; interconnections; semiconductor technology; surface cleaning; Cu; copper fluorides; copper oxides; diluted amine solution; diluted inorganic acid solutions; eco-friendly copper interconnect cleaning process; effluent treatment facility; post-etch residues; silicon oxides; Chemicals; Contacts; Copper; Data analysis; Dry etching; Effluents; Polymers; Semiconductor device manufacture; Silicon; Surface cleaning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
Type :
conf
DOI :
10.1109/IITC.2007.382341
Filename :
4263653
Link To Document :
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