Title :
Design for Manufacturability in Backend Reliability and Packaging of Nanoscale Technologies
Author :
Lim, Y.K. ; Tan, J.B. ; Pey, K.L. ; Chua, E.C. ; Yeo, Y.H. ; Fu, Thomas ; Hsia, L.C.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
Integration of copper (Cu) and low-k dielectrics has posed significant challenges for device reliability and packaging. For faster and successful semiconductor product introduction, early implementation of simulation model for physics and mechanical studies, and the subsequent design for manufacturability (DFM) are important considerations for device reliability and packaging communities. In this paper, several structural designs and finite element analysis (FEA) simulation models were employed to illustrate the importance of DFM in backend reliability and packaging. Also, its extendibility to future nanoscale technologies employing porous ultra low-k Cu interconnects was discussed.
Keywords :
copper; design for manufacture; finite element analysis; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; low-k dielectric thin films; nanoelectronics; nanotechnology; DFM; FEA; backend reliability; design-for-manufacturability; finite element analysis simulation models; high performance IC; low-k dielectrics; nanoscale technologies packaging; porous ultra low-k copper interconnects; semiconductor product introduction; Analytical models; Copper; Design for manufacture; Dielectric devices; Finite element methods; Physics; Semiconductor device manufacture; Semiconductor device packaging; Semiconductor device reliability; Virtual manufacturing;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382342