Use of reflectance spectroscopy for in-situ monitoring of InP/InGaAsP films grown by MOVPE

Author

Lum, R.M. ; McDonald, M.L. ; Bean, J.C. ; Vandenberg, J. ; Pernell, T.L. ; Chu, S.N.G. ; Robertson, A. ; Karp, A.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

578

Lastpage

581

Abstract

In this paper we report the use of multiwavelength reflectance spectroscopy to obtain the first in-situ optical measurements of InGaAsP/InP-based growth. Broadband reflectometry eliminates the instrumental and alignment complexities associated with spectroellipsometry and laser-based techniques, making it more readily adaptable to the quartz reactor and higher pressure environment in MOVPE

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; reflectivity; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; InGaAsP-InP; InGaAsP/InP-based grow; InP/InGaAsP films; MOVPE; broadband reflectometry; high pressure environment; in-situ monitoring; in-situ optical measurements; multiwavelength reflectance spectroscopy; quartz reactor; reflectance spectroscopy; Epitaxial growth; Epitaxial layers; Indium phosphide; Monitoring; Optical films; Optical interferometry; Optical scattering; Optical sensors; Reflectivity; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492314

Filename

492314