Title :
Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth
Author :
Tiginyanu, I.M. ; Ursaki, V.V. ; Pödör, B. ; Csontos, L. ; Shontya, V.P.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Abstract :
The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of rare earth elements in LPE of III-Vs. An important outcome of this study is that Raman scattering provides a non-destructive, simple and accurate way to characterize the InGaAs layers
Keywords :
III-V semiconductors; Raman spectra; dysprosium; gallium arsenide; indium compounds; interface structure; liquid phase epitaxial growth; semiconductor doping; semiconductor growth; semiconductor heterojunctions; Dy doping level; III-V semiconductor; InGaAs layers; InGaAs-InP; InGaAs:Dy/InP; InP; LPE; Raman scattering; Raman scattering analysis; liquid phase epitaxial growth; nondestructive method; rare earth addition; rare earth elements; Atomic layer deposition; Atomic measurements; Charge carrier processes; Indium gallium arsenide; Indium phosphide; Light scattering; Particle scattering; Raman scattering; Spectroscopy; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492320
