• DocumentCode
    296362
  • Title

    As desorption from InGaAs monolayer during PH3-purge in OMVPE growth of InP/InGaAs(1 ML)/InP heterostructures measured by X-ray CTR scattering

  • Author

    Tabuchi, M. ; Yamada, N. ; Ichiki, S. ; Takeda, Y.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    606
  • Lastpage
    609
  • Abstract
    In this work, the effect of PH3-purge after the growth of the heterolayer was investigated for InP/InGaAs(1 ML)/InP heterostructures. InP/InGaAs/InP samples were prepared by low pressure OMVPE on InP(001) substrates using TEGa, TMIn, AsII3 and PH 3 as source gases. The growth temperature was set at 620°C
  • Keywords
    III-V semiconductors; X-ray scattering; desorption; gallium arsenide; indium compounds; interface structure; monolayers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; 620 C; As desorption; AsII3; InGaAs monolayer; InP; InP(001) substrates; InP-InGaAs-InP; InP/InGaAs/InP heterostructures; OMVPE growth; PH3; PH3-purge; TEGa; TMIn; X-ray CTR scattering; growth temperature; heterolayer; low pressure OMVPE; source gases; Atomic layer deposition; Cameras; Gallium arsenide; Helium; Indium gallium arsenide; Indium phosphide; Physics; Production facilities; Shape; X-ray imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.492321
  • Filename
    492321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=296362