DocumentCode
2963680
Title
Advanced Cu/Low-k BEOL Integration, Reliability, and Extendibility
Author
Edelstein, Daniel C.
Author_Institution
IBM Fellow, Manager, BEOL Technology Strategy, IBM T.J. Watson Research Center, Yorktown Hts., NY, 10598. edelstei@us.ibm.com
fYear
2007
fDate
4-6 June 2007
Firstpage
57
Lastpage
57
Abstract
This talk will be a detailed discussion of technical aspects of Cu BEOL wiring that may be helpful or essential to preserve it successful migration path. The focus will be on BEOL architecture, integration techniques, their impact on reliability, and their outlooks for 32 nm. The talk will mainly call on new data produced by our Research and Development organizations and their associated alliances.
Keywords
electromigration; integrated circuit interconnections; integrated circuit reliability; metallisation; Cu damascene interconnect; Cu-low-k BEOL integration; back end-of-line wiring; contact metallization; reliability; CMOS logic circuits; Chemistry; Dielectrics and electrical insulation; Etching; Foundries; Research and development; Resists; Silicon compounds; Technology management; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
International Interconnect Technology Conference, IEEE 2007
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-1069-X
Electronic_ISBN
1-4244-1070-3
Type
conf
DOI
10.1109/IITC.2007.382347
Filename
4263659
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