Title :
Advanced Cu/Low-k BEOL Integration, Reliability, and Extendibility
Author :
Edelstein, Daniel C.
Author_Institution :
IBM Fellow, Manager, BEOL Technology Strategy, IBM T.J. Watson Research Center, Yorktown Hts., NY, 10598. edelstei@us.ibm.com
Abstract :
This talk will be a detailed discussion of technical aspects of Cu BEOL wiring that may be helpful or essential to preserve it successful migration path. The focus will be on BEOL architecture, integration techniques, their impact on reliability, and their outlooks for 32 nm. The talk will mainly call on new data produced by our Research and Development organizations and their associated alliances.
Keywords :
electromigration; integrated circuit interconnections; integrated circuit reliability; metallisation; Cu damascene interconnect; Cu-low-k BEOL integration; back end-of-line wiring; contact metallization; reliability; CMOS logic circuits; Chemistry; Dielectrics and electrical insulation; Etching; Foundries; Research and development; Resists; Silicon compounds; Technology management; Wiring;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382347
