Title :
Characterization of InP Schottky junctions formed by in-situ remote plasma process
Author :
Sugino, T. ; Sakamoto, Y. ; Miyazaki, T. ; Kousaka, K. ; Matsuda, K. ; Shirafuji, J.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
Au/PNx/InP tunnel metal-insulator-semiconductor (MIS) Schottky junctions have been formed by using in-situ remote plasma process consisting of removal of native oxide due to H2 plasma, surface modification due to PH3 plasma and deposition of PNx films due to decomposition of PH3 by N2 plasma. Both effective and true barrier heights are estimated to be 0.83 and 0.57 eV, respectively. Neither barrier height nor ideality factor is varied even after annealing at 250°C. The forward current drift is significantly suppressed by annealing
Keywords :
III-V semiconductors; MIS devices; MIS structures; Schottky barriers; Schottky diodes; annealing; gold; indium compounds; phosphorus compounds; plasma deposition; surface treatment; tunnelling; 250 C; Au-PN-InP; Au/PNx/InP tunnel MIS Schottky junction; PH3 decomposition; PNx film deposition; annealing; barrier height; forward current drift; ideality factor; in-situ remote plasma processing; native oxide removal; surface treatment; Annealing; Gold; Hydrogen; Indium phosphide; Metal-insulator structures; Plasma applications; Plasma density; Schottky barriers; Substrates; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492386
