Characterization of InP Schottky junctions formed by in-situ remote plasma process

Author

Sugino, T. ; Sakamoto, Y. ; Miyazaki, T. ; Kousaka, K. ; Matsuda, K. ; Shirafuji, J.

Author_Institution

Dept. of Electr. Eng., Osaka Univ., Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

685

Lastpage

688

Abstract

Au/PN_x/InP tunnel metal-insulator-semiconductor (MIS) Schottky junctions have been formed by using in-situ remote plasma process consisting of removal of native oxide due to H₂ plasma, surface modification due to PH₃ plasma and deposition of PN_x films due to decomposition of PH₃ by N₂ plasma. Both effective and true barrier heights are estimated to be 0.83 and 0.57 eV, respectively. Neither barrier height nor ideality factor is varied even after annealing at 250°C. The forward current drift is significantly suppressed by annealing

Keywords

III-V semiconductors; MIS devices; MIS structures; Schottky barriers; Schottky diodes; annealing; gold; indium compounds; phosphorus compounds; plasma deposition; surface treatment; tunnelling; 250 C; Au-PN-InP; Au/PN_x/InP tunnel MIS Schottky junction; PH₃ decomposition; PN_x film deposition; annealing; barrier height; forward current drift; ideality factor; in-situ remote plasma processing; native oxide removal; surface treatment; Annealing; Gold; Hydrogen; Indium phosphide; Metal-insulator structures; Plasma applications; Plasma density; Schottky barriers; Substrates; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492386

Filename

492386