Title :
A double InGaAs/InP HBT technology for lightwave communication circuits design
Author :
Launay, P. ; Caffin, D. ; Duchenois, A.M. ; Héliot, F.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
A InGaAs/InP double heterojunction bipolar transistor technology has been developed to meet the requirements of circuits for 40 Gb/s optical communication links. In particular a breakdown voltage higher than 10 V, cut-off frequencies higher than 60 GHz over a large emitter-collector voltage range have been achieved
Keywords :
III-V semiconductors; bipolar MIMIC; bipolar digital integrated circuits; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; millimetre wave bipolar transistors; optical communication equipment; 13 V; 40 Gbit/s; 60 GHz; 70 GHz; DHBT technology; EHF; InP; MM-wave cutoff frequencies; breakdown voltage; double InGaAs/lnP HBT technology; double heterojunction bipolar transistor; lightwave communication circuits design; Breakdown voltage; Circuit synthesis; Dry etching; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Leakage current; Semiconductor films; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492390
