Title :
Formation of self-organized quantum dot structures and quasi-perfect CuPt-type ordering by gas-source MBE growth of (GaP)n (InP)n superlattices
Author :
Kim, S.J. ; Asahi, H. ; Takemoto, M. ; Asami, K. ; Takeuchi, M. ; Gonda, S.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
(GaP)n(InP)n short period superlattices (SLs) are grown on GaAs(N11) substrates by gas-source MBE. Transmission electron microscopy observations show that the SLs grown on GaAs(311)A and (411)A have dot structures with a size of about 10-20 nm. Photoluminescence (PL) peak energies are greatly dependent on substrate orientation and monolayer number n. On the other hand, the (GaP)1 (InP)1 SLs grown on (111) have no composition modulation and have quasiperfect CuPt-type ordering along the [111] growth direction. The PL peak energy is 321 meV lower than that of disordered InGaP alloy. Self-organized (GaP)n(InP)m SL(dot/barrier)/In0.49Ga 0.51P(barrier) quantum dot structures exhibit strong 77 K PL with a full width at half maximum of about 70 meV
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; semiconductor superlattices; transmission electron microscopy; (GaP)n(InP)n short period superlattice; GaAs; GaAs(N11) substrate; GaP-InP; composition modulation; gas-source MBE growth; monolayer number; photoluminescence; quasi-perfect CuPt-type ordering; self-organized quantum dots; substrate orientation; transmission electron microscopy; Electron beams; Gallium arsenide; Laser excitation; Laser sintering; Lattices; Photonic band gap; Quantum dots; Surface structures; US Department of Transportation; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492405
