A Study of Adhesion and Improvement of Adhesion Energy Using Hybrid Low-k (porous-PAr/ porous-SiOC(k=2.3/2.3)) Structures with Multi-layered Cu Interconnects for 45-nm Node Devices

Author

Usami, T. ; Maruyama, C. ; Tagami, M. ; Watanabe, K. ; Kameshima, T. ; Masuda, H. ; Shimada, M. ; Gawase, A. ; Kagawa, Y. ; Nakamura, N. ; Miyajima, H. ; Naruse, H. ; Enomoto, Y. ; Kitano, T. ; Sekine, M.

Author_Institution

NEC Electron. Corp., Sagamihara

fYear

2007

fDate

4-6 June 2007

Firstpage

96

Lastpage

98

Abstract

Adhesion tests for a real Cu/low-k patterned structure were studied for 45-nm node devices. Results from 4 point-bending (4PB) and modified edge lift-off tests (m-ELT) were compared. Cu dual damascene interconnects structures with stacked hybrid low-k which is porous-poly-arylene(p-PAr)/porous-SiOC(p-SiOC) (k=2.3/2.3) were evaluated. Peel-off occurred in different locations in the real patterned structures subjected to the m-ELT test and in the structures subjected to the 4PB test. In addition, the adhesion energy (Gc: interface fracture energy) of the peeled-off interfaces was improved (Ge ges1.6x) by different treatment processes.

Keywords

adhesion; copper; fracture toughness; integrated circuit interconnections; integrated circuit testing; low-k dielectric thin films; multilayers; nanoelectronics; organic-inorganic hybrid materials; porous materials; surface energy; 4 point-bending test; Cu; adhesion energy; adhesion tests; dual damascene interconnects structures; hybrid low-k structures; interface fracture energy; modified edge lift-off tests; multilayered copper interconnects; peeled-off interfaces; porous-poly-arylene; size 45 nm; Adhesives; Dielectrics; Energy measurement; National electric code; Packaging; Propagation delay; Silicon carbide; Stress; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

International Interconnect Technology Conference, IEEE 2007

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-1069-X

Electronic_ISBN

1-4244-1070-3

Type

conf

DOI

10.1109/IITC.2007.382358

Filename

4263670