Title :
Mechanism and Application of Negative Charging Mode of Electron Beam Inspection for PMOS Leakage Detection
Author :
Lai, Li-Lung ; Xu, Keren ; Deng, Daniel ; Ning, Jay ; Xiao, Hong ; Zhao, Yan ; Ma, Eric ; Jau, Jack
Author_Institution :
Semicond. Manuf. Int. (Beijing) Corp, Beijing
Abstract :
In this study, we modified surface condition of tungsten chemical mechanical polish (WCMP) to resolve the mix mode issue and achieved and optimized negative mode electron beam inspection (EBI). We detected dark voltage contrast (DVC) defects on static random access memory (SRAM) array at PMOS contacts. Physical failure analysis (PFA) results confirmed prediction that they are P+/N-well junction leakages caused by nickel silicide (NiSix) spiking.
Keywords :
MOS memory circuits; SRAM chips; chemical mechanical polishing; electric potential; electrical contacts; electrical faults; electron beam testing; failure analysis; inspection; integrated circuit interconnections; integrated circuit testing; leak detection; tungsten; PMOS leakage detection; SRAM array; W; dark voltage contrast defects detection; electron beam inspection; interconnect process inspection; mix mode issue; negative charging mode; nickel silicide spiking mechanism; physical failure analysis; static random access memory array; surface condition; tungsten chemical mechanical polishing mechanism; Chemicals; Electron beams; Failure analysis; Inspection; Leak detection; Random access memory; SRAM chips; Surface charging; Tungsten; Voltage;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382362
