DocumentCode
2963891
Title
Steady state thermal conductivity measurements of AlN and SiC substrate materials
Author
Dettmer, E.S. ; Romenesko, B.M. ; Charles, H.K., Jr. ; Carkhuff, B.G. ; Merrill, D.J.
Author_Institution
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
fYear
1989
fDate
22-24 May 1989
Firstpage
551
Lastpage
556
Abstract
Measurements of thermal conductivity on conventional and recently developed electronic ceramics (Al2O3, AlN, BeO, and SiC) are presented as part of an effort to incorporate the new high-thermal-conductivity ceramics into microcircuit manufacturing. Motivated by large variations in values claimed by different vendors for ostensibly similar materials, a longitudinal bar apparatus was built to measure thermal conductivities of actual substrate materials on both an individual and a lot sampling basis. The longitudinal bar method is compared to other experimental techniques for measuring thermal conductivity. Room-temperature and high-temperature thermal conductivity results and results on the effects of thick-film processing are presented and discussed. The results indicate that AlN could find substantial use in circuit manufacture
Keywords
alumina; aluminium compounds; beryllium compounds; ceramics; hybrid integrated circuits; silicon compounds; substrates; thermal conductivity measurement; thermal conductivity of solids; Al2O3; AlN; BeO; SiC; circuit manufacture; electronic ceramics; longitudinal bar apparatus; microcircuit manufacturing; steady state thermal conductivity; substrate materials; thick-film processing; Ceramics; Conducting materials; Conductivity measurement; Electronic packaging thermal management; Silicon carbide; Steady-state; Substrates; Temperature measurement; Thermal conductivity; Thermal expansion;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location
Houston, TX
Type
conf
DOI
10.1109/ECC.1989.77804
Filename
77804
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