DocumentCode :
2963891
Title :
Steady state thermal conductivity measurements of AlN and SiC substrate materials
Author :
Dettmer, E.S. ; Romenesko, B.M. ; Charles, H.K., Jr. ; Carkhuff, B.G. ; Merrill, D.J.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
fYear :
1989
fDate :
22-24 May 1989
Firstpage :
551
Lastpage :
556
Abstract :
Measurements of thermal conductivity on conventional and recently developed electronic ceramics (Al2O3, AlN, BeO, and SiC) are presented as part of an effort to incorporate the new high-thermal-conductivity ceramics into microcircuit manufacturing. Motivated by large variations in values claimed by different vendors for ostensibly similar materials, a longitudinal bar apparatus was built to measure thermal conductivities of actual substrate materials on both an individual and a lot sampling basis. The longitudinal bar method is compared to other experimental techniques for measuring thermal conductivity. Room-temperature and high-temperature thermal conductivity results and results on the effects of thick-film processing are presented and discussed. The results indicate that AlN could find substantial use in circuit manufacture
Keywords :
alumina; aluminium compounds; beryllium compounds; ceramics; hybrid integrated circuits; silicon compounds; substrates; thermal conductivity measurement; thermal conductivity of solids; Al2O3; AlN; BeO; SiC; circuit manufacture; electronic ceramics; longitudinal bar apparatus; microcircuit manufacturing; steady state thermal conductivity; substrate materials; thick-film processing; Ceramics; Conducting materials; Conductivity measurement; Electronic packaging thermal management; Silicon carbide; Steady-state; Substrates; Temperature measurement; Thermal conductivity; Thermal expansion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
Type :
conf
DOI :
10.1109/ECC.1989.77804
Filename :
77804
Link To Document :
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