• DocumentCode
    2963891
  • Title

    Steady state thermal conductivity measurements of AlN and SiC substrate materials

  • Author

    Dettmer, E.S. ; Romenesko, B.M. ; Charles, H.K., Jr. ; Carkhuff, B.G. ; Merrill, D.J.

  • Author_Institution
    Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
  • fYear
    1989
  • fDate
    22-24 May 1989
  • Firstpage
    551
  • Lastpage
    556
  • Abstract
    Measurements of thermal conductivity on conventional and recently developed electronic ceramics (Al2O3, AlN, BeO, and SiC) are presented as part of an effort to incorporate the new high-thermal-conductivity ceramics into microcircuit manufacturing. Motivated by large variations in values claimed by different vendors for ostensibly similar materials, a longitudinal bar apparatus was built to measure thermal conductivities of actual substrate materials on both an individual and a lot sampling basis. The longitudinal bar method is compared to other experimental techniques for measuring thermal conductivity. Room-temperature and high-temperature thermal conductivity results and results on the effects of thick-film processing are presented and discussed. The results indicate that AlN could find substantial use in circuit manufacture
  • Keywords
    alumina; aluminium compounds; beryllium compounds; ceramics; hybrid integrated circuits; silicon compounds; substrates; thermal conductivity measurement; thermal conductivity of solids; Al2O3; AlN; BeO; SiC; circuit manufacture; electronic ceramics; longitudinal bar apparatus; microcircuit manufacturing; steady state thermal conductivity; substrate materials; thick-film processing; Ceramics; Conducting materials; Conductivity measurement; Electronic packaging thermal management; Silicon carbide; Steady-state; Substrates; Temperature measurement; Thermal conductivity; Thermal expansion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components Conference, 1989. Proceedings., 39th
  • Conference_Location
    Houston, TX
  • Type

    conf

  • DOI
    10.1109/ECC.1989.77804
  • Filename
    77804