Title :
A Comparison of Voltage Ramp and Time Dependent Dielectric Breakdown Tests for Evaluation of 45nm Low-k SiCOH Reliability
Author :
Chen, F. ; McLaughlin, P. ; Gambino, J. ; Gill, J.
Author_Institution :
IBM Microelectron., Essex Junction
Abstract :
A comparison of the relationship between voltage ramp dielectric breakdown (VRDB) test and constant-voltage time-dependent dielectric breakdown (TDDB) stress has been performed as part of a 45 nm low-k SiCOH reliability evaluation. Although some correlation was observed between VRDB and TDDB, it was found that the fast VRDB test can´t replace TDDB to evaluate true long-term time-dependent behavior, which is important for reliability qualification. However, with the combination of VRDB and TDDB, a more comprehensive reliability assessment of low- k dielectric breakdown could be achieved. Finally, a novel, non-destructive spacing determination methodology is proposed and an excellent agreement between the extracted spacing and measured spacing is demonstrated.
Keywords :
CMOS integrated circuits; electric breakdown; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; CMOS process; M2 interconnect level; SEM analysis; SiCOH; SiCOH reliability evaluation; line-to-line spacing; low-k dielectric breakdown reliability assessment; nondestructive spacing determination methodology; size 45 nm; tensile stress; time dependent dielectric breakdown test; voltage ramp dielectric breakdown test; Breakdown voltage; Capacitance-voltage characteristics; Contacts; Dielectric breakdown; Dielectric materials; Electron traps; Life testing; Microelectronics; Performance evaluation; Qualifications;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382370
