DocumentCode
2964218
Title
Effect of the Hydrophilic-Lipophilic Balance (HLB) of Surfactants Included in the Post-CMP Cleaning Chemicals on Porous SiOC Direct CMP
Author
Kondo, S. ; Shiohara, M. ; Maruyama, K. ; Fukaya, K. ; Yamada, K. ; Ogawa, S. ; Saito, S.
Author_Institution
Semicond. Leading Edge Technol., Tsukuba
fYear
2007
fDate
4-6 June 2007
Firstpage
172
Lastpage
174
Abstract
To reduce the effective k-value for the 45-nm node, direct CMP of a porous SiOC film without a protective cap layer is required. The hydrophilic-lipophilic balance (HLB) of a surfactant included in the post-CMP cleaning chemical was found to be a parameter that determines SiOC film damage and cleaning ability after direct CMP. To suppress the k-value increase and watermark generation, we need to reduce the chemical and mechanical stress of the barrier metal CMP slurry and brush scrub cleaning. Moreover, IPA (or glycolether) cleaning and H2/He remote plasma treatment are an effective restoring treatment after direct CMP.
Keywords
chemical mechanical polishing; copper; integrated circuit interconnections; low-k dielectric thin films; nanoelectronics; plasma materials processing; porous materials; silicon compounds; slurries; stress analysis; surface cleaning; surfactants; SiOC-Cu; brush scrub cleaning; chemical stress reduction; direct CMP; effective k-value reduction; hydrophilic-lipophilic balance effects; mechanical stress reduction; porous SiOC film; post-CMP cleaning chemicals; remote plasma treatment; size 45 nm; surfactants; watermark generation; Brushes; Chemical technology; Cleaning; Hydrogen; Lead compounds; Protection; Semiconductor films; Slurries; Stress; Watermarking;
fLanguage
English
Publisher
ieee
Conference_Titel
International Interconnect Technology Conference, IEEE 2007
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-1069-X
Electronic_ISBN
1-4244-1070-3
Type
conf
DOI
10.1109/IITC.2007.382381
Filename
4263693
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