• DocumentCode
    2964218
  • Title

    Effect of the Hydrophilic-Lipophilic Balance (HLB) of Surfactants Included in the Post-CMP Cleaning Chemicals on Porous SiOC Direct CMP

  • Author

    Kondo, S. ; Shiohara, M. ; Maruyama, K. ; Fukaya, K. ; Yamada, K. ; Ogawa, S. ; Saito, S.

  • Author_Institution
    Semicond. Leading Edge Technol., Tsukuba
  • fYear
    2007
  • fDate
    4-6 June 2007
  • Firstpage
    172
  • Lastpage
    174
  • Abstract
    To reduce the effective k-value for the 45-nm node, direct CMP of a porous SiOC film without a protective cap layer is required. The hydrophilic-lipophilic balance (HLB) of a surfactant included in the post-CMP cleaning chemical was found to be a parameter that determines SiOC film damage and cleaning ability after direct CMP. To suppress the k-value increase and watermark generation, we need to reduce the chemical and mechanical stress of the barrier metal CMP slurry and brush scrub cleaning. Moreover, IPA (or glycolether) cleaning and H2/He remote plasma treatment are an effective restoring treatment after direct CMP.
  • Keywords
    chemical mechanical polishing; copper; integrated circuit interconnections; low-k dielectric thin films; nanoelectronics; plasma materials processing; porous materials; silicon compounds; slurries; stress analysis; surface cleaning; surfactants; SiOC-Cu; brush scrub cleaning; chemical stress reduction; direct CMP; effective k-value reduction; hydrophilic-lipophilic balance effects; mechanical stress reduction; porous SiOC film; post-CMP cleaning chemicals; remote plasma treatment; size 45 nm; surfactants; watermark generation; Brushes; Chemical technology; Cleaning; Hydrogen; Lead compounds; Protection; Semiconductor films; Slurries; Stress; Watermarking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International Interconnect Technology Conference, IEEE 2007
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    1-4244-1069-X
  • Electronic_ISBN
    1-4244-1070-3
  • Type

    conf

  • DOI
    10.1109/IITC.2007.382381
  • Filename
    4263693