Title :
45nm-node Interconnects with Porous SiOCH-Stacks, Tolerant of Low-Cost Packaging Applications
Author :
Inoue, N. ; Tagami, M. ; Itoh, F. ; Yamamoto, H. ; Takeuchi, T. ; Saito, S. ; Furutake, N. ; Ueki, M. ; Tada, M. ; Suzuki, T. ; Hayashi, Y.
Author_Institution :
NEC Corp., Sagamihara
Abstract :
The 45 nm-node interconnect with porous SiOCH-stacks of keff=2.9 is confirmed to have the practical reliability in PGBA and QFP. Adhesion strength of the via-ILD to the lower SiCN capping layer significantly impacts on the wire-bond reliability, but spreading the contact area of the bonding-wire within the fine-pitched bonding-pad suppresses the bonding failures in the low-k stack structures, irrespective of additional process of low-k curing or not. No failure was detected during reliability tests in PBGA package as well as QFP, confirming the practicality of the low keff interconnects for 45 nm-node ULSIs.
Keywords :
ULSI; adhesion; ball grid arrays; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; lead bonding; silicon compounds; PBGA package; ULSI; adhesion strength; bonding failure; bonding-wire; fine-pitched bonding-pad; low keff interconnects; low-cost packaging applications; low-k stack structures; porous SiOCH-stacks; size 45 nm; wire-bond reliability; Adhesives; Dielectrics; Electromagnetic compatibility; Electronics packaging; Integrated circuit interconnections; Seals; Substrates; Testing; Thermal stresses; Wafer bonding;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382384
