DocumentCode
2964511
Title
Surface plasmon coupling for light emission/absorption/conversion enhancement
Author
Yeh, Dong-Ming ; Chen, Cheng-Yen ; Lu, Yen-Cheng ; Shen, Kun-Ching ; Wang, Jyh-Yang ; Chuang, Wen-Hung ; Kiang, Yean-Woei ; Yang, C.C.
Author_Institution
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
22
Lastpage
23
Abstract
Surface plasmon polariton and localized surface plasmon couplings with InGaN/GaN quantum wells in bluegreen light-emitting diodes are used for enhancing their emission efficiencies by 25-200 % depending on the used quantum well crystal quality.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; polaritons; semiconductor quantum wells; surface plasmons; wide band gap semiconductors; InGaN-GaN; blue-green light-emitting diodes; crystal quality; emission efficiencies; localized surface plasmon couplings; quantum wells; surface plasmon polariton; Absorption; Dielectrics; Gallium nitride; Gold; Light emitting diodes; Nanostructures; Optical coupling; Plasmons; Semiconductor films; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634419
Filename
4634419
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