Nano-modeling of the doping profiles for a symmetric double gate InAlAs/InGaAs/InP HEMT

Author

Verma, Naveen ; Jogi, Jyotika ; Gupta, Madhu ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2012

fDate

19-22 Nov. 2012

Firstpage

1

Lastpage

5

Abstract

The aim of this paper is to simulate, study and determine the impact of variations in doping profiles on the behavior of nanoscale symmetric double gate InAlAs/InGaAs/InP HEMT. Gaussian, Delta and Uniform doping profiles have been used in the device structure for this comparison. Quantum confinement of carriers in the channel has been incorporated using the Quantum Moments model with an ATLAS device simulator. The simulated results are obtained for I_DS-V_DS, I_DS-V_GS, transconductance (g_m) and cut-off frequency (f_T). Comparison of the transconductance and cut-off frequency for various doping profiles implemented is presented to study the improvement in the device performance.

Keywords

doping profiles; high electron mobility transistors; ATLAS device simulator; Gaussian doping profiles; InAlAs-InGaAs-InP; cut off frequency; delta doping profiles; nanomodeling; nanoscale symmetric double gate HEMT; quantum confinement; quantum moments model; transconductance; uniform doping profiles; Doping profiles; HEMTs; Indium gallium arsenide; Logic gates; Semiconductor process modeling; delta-doped; doping profile; double-gate HEMT (DGHEMT); gaussian distribution; quantum moments model;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2012 - 2012 IEEE Region 10 Conference

Conference_Location

Cebu

ISSN

2159-3442

Print_ISBN

978-1-4673-4823-2

Electronic_ISBN

2159-3442

Type

conf

DOI

10.1109/TENCON.2012.6412229

Filename

6412229