Nano-modeling of the doping profiles for a symmetric double gate InAlAs/InGaAs/InP HEMT

The aim of this paper is to simulate, study and determine the impact of variations in doping profiles on the behavior of nanoscale symmetric double gate InAlAs/InGaAs/InP HEMT. Gaussian, Delta and Uniform doping profiles have been used in the device structure for this comparison. Quantum confinement of carriers in the channel has been incorporated using the Quantum Moments model with an ATLAS device simulator. The simulated results are obtained for I_DS-V_DS, I_DS-V_GS, transconductance (g_m) and cut-off frequency (f_T). Comparison of the transconductance and cut-off frequency for various doping profiles implemented is presented to study the improvement in the device performance.