DocumentCode
2964581
Title
Investigation of fabricating a LiNbO3 ultrasonic phased array transducer of more than 100 MHz
Author
Zhang, J.Y. ; Xu, W.J. ; Carlier, J. ; Ji, X.M. ; Nongaillard, B. ; Queste, S. ; Huang, Y.P.
Author_Institution
Dept. Opto-Acousto-Electron., Univ. de Valenciennes, Valenciennes, France
fYear
2011
fDate
28-31 Oct. 2011
Firstpage
1542
Lastpage
1545
Abstract
36°/Y-cut lithium niobate (LiNbO3) single crystals have been patterned by means of Inductively Coupled Plasma (ICP) deep etching to create ultrasonic arrays resonating in the frequency range of 100-200 MHz. The limitation of etching aspect ratio and the minimum pitch are explored under the optimized ICP parameters. The experimental results demonstrate that the minimum pitch could be obtained at about 25 μm, equivalent to a pitch of 1.6 λ, with a kerf depth of 16 μm. Focusing Ion Beam (FIB) technique is also studied to etch LiNbO3 crystals. The aspect ratio is up to as high as 6. A pitch of 0.5 λ can be obtained for a 100 MHz half-kerfed LiNbO3 array.
Keywords
focused ion beam technology; lithium compounds; sputter etching; ultrasonic transducer arrays; 36°/Y-cut lithium niobate single crystals; LiNbO3; depth 16 mum; focusing ion beam technique; frequency 100 MHz to 200 MHz; half-kerfed LiNbO3 array; inductively coupled plasma deep etching; ultrasonic phased array transducer; Acoustics; Arrays; Etching; Iterative closest point algorithm; Lithium niobate; Nickel; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2011 IEEE
Conference_Location
Limerick
ISSN
1930-0395
Print_ISBN
978-1-4244-9290-9
Type
conf
DOI
10.1109/ICSENS.2011.6126901
Filename
6126901
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