DocumentCode :
2964581
Title :
Investigation of fabricating a LiNbO3 ultrasonic phased array transducer of more than 100 MHz
Author :
Zhang, J.Y. ; Xu, W.J. ; Carlier, J. ; Ji, X.M. ; Nongaillard, B. ; Queste, S. ; Huang, Y.P.
Author_Institution :
Dept. Opto-Acousto-Electron., Univ. de Valenciennes, Valenciennes, France
fYear :
2011
fDate :
28-31 Oct. 2011
Firstpage :
1542
Lastpage :
1545
Abstract :
36°/Y-cut lithium niobate (LiNbO3) single crystals have been patterned by means of Inductively Coupled Plasma (ICP) deep etching to create ultrasonic arrays resonating in the frequency range of 100-200 MHz. The limitation of etching aspect ratio and the minimum pitch are explored under the optimized ICP parameters. The experimental results demonstrate that the minimum pitch could be obtained at about 25 μm, equivalent to a pitch of 1.6 λ, with a kerf depth of 16 μm. Focusing Ion Beam (FIB) technique is also studied to etch LiNbO3 crystals. The aspect ratio is up to as high as 6. A pitch of 0.5 λ can be obtained for a 100 MHz half-kerfed LiNbO3 array.
Keywords :
focused ion beam technology; lithium compounds; sputter etching; ultrasonic transducer arrays; 36°/Y-cut lithium niobate single crystals; LiNbO3; depth 16 mum; focusing ion beam technique; frequency 100 MHz to 200 MHz; half-kerfed LiNbO3 array; inductively coupled plasma deep etching; ultrasonic phased array transducer; Acoustics; Arrays; Etching; Iterative closest point algorithm; Lithium niobate; Nickel; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
ISSN :
1930-0395
Print_ISBN :
978-1-4244-9290-9
Type :
conf
DOI :
10.1109/ICSENS.2011.6126901
Filename :
6126901
Link To Document :
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