• DocumentCode
    2964581
  • Title

    Investigation of fabricating a LiNbO3 ultrasonic phased array transducer of more than 100 MHz

  • Author

    Zhang, J.Y. ; Xu, W.J. ; Carlier, J. ; Ji, X.M. ; Nongaillard, B. ; Queste, S. ; Huang, Y.P.

  • Author_Institution
    Dept. Opto-Acousto-Electron., Univ. de Valenciennes, Valenciennes, France
  • fYear
    2011
  • fDate
    28-31 Oct. 2011
  • Firstpage
    1542
  • Lastpage
    1545
  • Abstract
    36°/Y-cut lithium niobate (LiNbO3) single crystals have been patterned by means of Inductively Coupled Plasma (ICP) deep etching to create ultrasonic arrays resonating in the frequency range of 100-200 MHz. The limitation of etching aspect ratio and the minimum pitch are explored under the optimized ICP parameters. The experimental results demonstrate that the minimum pitch could be obtained at about 25 μm, equivalent to a pitch of 1.6 λ, with a kerf depth of 16 μm. Focusing Ion Beam (FIB) technique is also studied to etch LiNbO3 crystals. The aspect ratio is up to as high as 6. A pitch of 0.5 λ can be obtained for a 100 MHz half-kerfed LiNbO3 array.
  • Keywords
    focused ion beam technology; lithium compounds; sputter etching; ultrasonic transducer arrays; 36°/Y-cut lithium niobate single crystals; LiNbO3; depth 16 mum; focusing ion beam technique; frequency 100 MHz to 200 MHz; half-kerfed LiNbO3 array; inductively coupled plasma deep etching; ultrasonic phased array transducer; Acoustics; Arrays; Etching; Iterative closest point algorithm; Lithium niobate; Nickel; Transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2011 IEEE
  • Conference_Location
    Limerick
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-9290-9
  • Type

    conf

  • DOI
    10.1109/ICSENS.2011.6126901
  • Filename
    6126901