Selective MOVPE grown semiconductor optical waveguide array and its application for optical devices

Author

Shimomura, K.

Author_Institution

Dept. of Appl. Sci. & Eng., Sophia Univ., Tokyo

fYear

2008

fDate

2-15 Aug. 2008

Firstpage

30

Lastpage

31

Abstract

Fabrication and application for wavelength demultiplexer, wavelength selective switch and light emitting diode of a novel GaInAs/InP MQW and InAs/InP QDs waveguide array with gradually varying bandgap wavelength by using selective MOVPE growth are presented.

Keywords

III-V semiconductors; MOCVD; demultiplexing equipment; energy gap; gallium arsenide; gallium compounds; indium compounds; integrated optics; light emitting diodes; optical arrays; optical switches; optical waveguides; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; vapour phase epitaxial growth; wavelength division multiplexing; GaInAs-InP; InAs-InP; MOVPE; bandgap wavelength; light emitting diode; multiple quantum wells; quantum dots; semiconductor optical waveguide array; wavelength demultiplexer; wavelength selective switch; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical arrays; Optical device fabrication; Optical devices; Optical switches; Optical waveguides; Semiconductor waveguides; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Conference_Location

Shonan Village

Print_ISBN

978-1-4244-2656-0

Type

conf

DOI

10.1109/INOW.2008.4634424

Filename

4634424