Title :
Selective MOVPE grown semiconductor optical waveguide array and its application for optical devices
Author_Institution :
Dept. of Appl. Sci. & Eng., Sophia Univ., Tokyo
Abstract :
Fabrication and application for wavelength demultiplexer, wavelength selective switch and light emitting diode of a novel GaInAs/InP MQW and InAs/InP QDs waveguide array with gradually varying bandgap wavelength by using selective MOVPE growth are presented.
Keywords :
III-V semiconductors; MOCVD; demultiplexing equipment; energy gap; gallium arsenide; gallium compounds; indium compounds; integrated optics; light emitting diodes; optical arrays; optical switches; optical waveguides; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; vapour phase epitaxial growth; wavelength division multiplexing; GaInAs-InP; InAs-InP; MOVPE; bandgap wavelength; light emitting diode; multiple quantum wells; quantum dots; semiconductor optical waveguide array; wavelength demultiplexer; wavelength selective switch; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical arrays; Optical device fabrication; Optical devices; Optical switches; Optical waveguides; Semiconductor waveguides; Stimulated emission;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634424
