DocumentCode :
2964687
Title :
Through wafer interconnects on active pMOS devices
Author :
Johnson, Vaughn N. ; Jozwiak, Jim ; Moll, Amy
Author_Institution :
Coll. of Eng., Boise State Univ., ID, USA
fYear :
2004
fDate :
2004
Firstpage :
82
Lastpage :
84
Abstract :
The objective of this research is to demonstrate the ability to create through-wafer interconnects (TWIs) on wafers with active devices. TWIs have previously been demonstrated on blank Si wafers. The application of TWIs in an industrial setting requires no damage or yield loss to the existing devices during additional processing steps. The test vehicle chosen is a simple pMOS test chip, which includes different structures such as transistors and invertors. The processing steps and sequence required to integrate TWIs into wafers with active devices is demonstrated.
Keywords :
MOS integrated circuits; integrated circuit interconnections; TWI processing steps; active pMOS devices; invertors; processing sequence; through-wafer interconnects; transistors; Copper; Etching; Integrated circuit interconnections; Inverters; MOS devices; Plasma applications; Resists; Silicon; Testing; Vehicles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices, 2004 IEEE Workshop on
Print_ISBN :
0-7803-8369-9
Type :
conf
DOI :
10.1109/WMED.2004.1297358
Filename :
1297358
Link To Document :
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