• DocumentCode
    2964735
  • Title

    InP-based VCSELs with AlGaInAs/InP DBR and their applications

  • Author

    Nishiyama, Nobuhiko

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    46
  • Lastpage
    48
  • Abstract
    Designs and characteristics of InP-based VCSELs with AlGaInAs/InP DBR are reported. High temperature (>85degC) and high speed (>10 Gbit/s) operation have been demonstrated. This VCSEL structure can be applicable to other applications such as tunable lasers.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; surface emitting lasers; AlGaInAs-InP; DBR; VCSEL; light sources; tunable lasers; Bit error rate; Dielectric substrates; Distributed Bragg reflectors; Indium phosphide; Reflectivity; Surface emitting lasers; Temperature; Threshold current; Tunable circuits and devices; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634432
  • Filename
    4634432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2964735