Title :
InP-based VCSELs with AlGaInAs/InP DBR and their applications
Author :
Nishiyama, Nobuhiko
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo
Abstract :
Designs and characteristics of InP-based VCSELs with AlGaInAs/InP DBR are reported. High temperature (>85degC) and high speed (>10 Gbit/s) operation have been demonstrated. This VCSEL structure can be applicable to other applications such as tunable lasers.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; surface emitting lasers; AlGaInAs-InP; DBR; VCSEL; light sources; tunable lasers; Bit error rate; Dielectric substrates; Distributed Bragg reflectors; Indium phosphide; Reflectivity; Surface emitting lasers; Temperature; Threshold current; Tunable circuits and devices; Vertical cavity surface emitting lasers;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634432
