DocumentCode
2964753
Title
Microscopic kinetics of capture, relaxation and recombination in ZnO- and GaN-based wide gap semiconductor nano-structures: nm-Spatially- and ps-time-resolved cathodoluminescence spectroscopy
Author
Christen, Jürgen
Author_Institution
Inst. of Exp. Phys., Otto-von-Guericke-Univ. Magdeburg, Magdeburg
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
48
Lastpage
49
Abstract
The unique potential of cathodoluminescence microscopy combining high spectral (deltalambda < 0.02 nm), spatial (delta x < 45 nm), and time (deltat < 35 ps) resolution enables direct access to the nano-scale properties of semiconductors.
Keywords
II-VI semiconductors; III-V semiconductors; carrier relaxation time; cathodoluminescence; gallium compounds; time resolved spectra; wide band gap semiconductors; zinc compounds; GaN; ZnO; nano-scale properties; ps-time-resolved cathodoluminescence spectroscopy; recombination; wide gap semiconductor nano-structures; Excitons; Impurities; Kinetic theory; Optical microscopy; Physics; Quantum dot lasers; Radiative recombination; Spectroscopy; Steady-state; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634433
Filename
4634433
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