DocumentCode :
2964753
Title :
Microscopic kinetics of capture, relaxation and recombination in ZnO- and GaN-based wide gap semiconductor nano-structures: nm-Spatially- and ps-time-resolved cathodoluminescence spectroscopy
Author :
Christen, Jürgen
Author_Institution :
Inst. of Exp. Phys., Otto-von-Guericke-Univ. Magdeburg, Magdeburg
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
48
Lastpage :
49
Abstract :
The unique potential of cathodoluminescence microscopy combining high spectral (deltalambda < 0.02 nm), spatial (delta x < 45 nm), and time (deltat < 35 ps) resolution enables direct access to the nano-scale properties of semiconductors.
Keywords :
II-VI semiconductors; III-V semiconductors; carrier relaxation time; cathodoluminescence; gallium compounds; time resolved spectra; wide band gap semiconductors; zinc compounds; GaN; ZnO; nano-scale properties; ps-time-resolved cathodoluminescence spectroscopy; recombination; wide gap semiconductor nano-structures; Excitons; Impurities; Kinetic theory; Optical microscopy; Physics; Quantum dot lasers; Radiative recombination; Spectroscopy; Steady-state; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634433
Filename :
4634433
Link To Document :
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