Effects of hydrogen in passivation PECVD nitride film on DRAM refresh performance

Author

Yin, Z. ; Christianson, D. ; Pasta, R.

Author_Institution

Micron Technol. Inc., Boise, ID, USA

fYear

2004

fDate

2004

Firstpage

114

Lastpage

116

Abstract

It was found that passivation nitride significantly affects DRAM refresh performance. To determine the factors in the nitride film that contributed to improved refresh performance, several analyses, such as Fourier-transform infrared spectrum (FTIR), thermal desorption spectrum (TDS), and x-ray photon spectroscopy (XPS), were performed on plasma enhanced chemical vapor deposition (PECVD) nitride film. The data revealed that the film with high Si-H bond in PECVD nitride film release more hydrogen in subsequent thermal process, in turn, to improved refresh performance.

Keywords

DRAM chips; Fourier transform spectra; X-ray photoelectron spectra; infrared spectra; nitridation; passivation; plasma CVD coatings; thermally stimulated desorption; DRAM refresh performance; Fourier-transform infrared spectrum; SiN; XPS; forming gas anneal; high Si-H bond; hydrogen effects; interface defects; leakage performance; passivation PECVD nitride film; refractive index; thermal desorption spectrum; Chemical analysis; Hydrogen; Infrared spectra; Passivation; Performance analysis; Plasma chemistry; Plasma x-ray sources; Random access memory; Spectroscopy; Thermal factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2004 IEEE Workshop on

Print_ISBN

0-7803-8369-9

Type

conf

DOI

10.1109/WMED.2004.1297369

Filename

1297369