Title :
Growth of InAs dot structures using dilute nitrogen and antimony for long wavelength lasers on GaAs
Author :
Miyamoto, Tomoyuki
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama
Abstract :
The GaInNAs and GaInAsSb based self-organized quantum dots were investigated. We observed the increased dot density, increased wavelength and improved emission efficiency by adding the nitrogen or antimony into the dot and/or its matrix. These materials are attractive for realizing the long wavelength VCSELs.
Keywords :
MOCVD; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor quantum dots; surface emitting lasers; GaAs; GaInAsSb; GaInNAs; InAs; MOCVD; VCSEL; antimony; dilute nitrogen; dot density; dot structure growth; emission efficiency; long wavelength lasers; self-organized quantum dots; Fabrication; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Quantum dot lasers; Substrates; Tensile strain; Vertical cavity surface emitting lasers;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634447
