Title :
New optoelectronic materials
Author_Institution :
Stanford Univ., Stanford, CA
Abstract :
Optoelectronics is a very materials dependent technology. The metastable growth of new alloy materials and strain have significantly increased the performance and addressable wavelength regions due to these materials technology enhancements. The growth technologies, new materials and resulting devices are described.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaInNAsSb; MBE; alloy materials; metastable growth; optoelectronic materials; strain; Annealing; Gallium arsenide; Germanium silicon alloys; Indium phosphide; Optical materials; Optical surface waves; Photonic band gap; Silicon germanium; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634448
