DocumentCode
2965062
Title
Optical properties of GaN: from free excitons in the bulk to confined negatively charged excitons in quantum dots grown by molecular beam epitaxy
Author
Gil, Bernard
Author_Institution
Groupe d´´Etude des semiconducteurs, Univ. Montpellier 2, Montpellier
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
83
Lastpage
83
Abstract
After reviewing fourtty years investigations of the optical properties of GaN bulk and thin film crystals grown along any crystallographic directions, I finally address the low dimensional systems and in particular, the optical properties of GaN quantum dots grown by molecular beam epitaxy and that are surprisingly compatible with recombinations of negatively charged excitons.
Keywords
III-V semiconductors; excitons; gallium compounds; molecular beam epitaxial growth; semiconductor quantum dots; wide band gap semiconductors; GaN; confined negatively charged excitons; free excitons; molecular beam epitaxy; optical properties; quantum dots; Books; Crystallography; Crystals; Excitons; Gallium nitride; Gas insulated transmission lines; Molecular beam epitaxial growth; Optical films; Quantum dots; Semiconductor thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634455
Filename
4634455
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