Title :
GaN-based nanocolumn emitters and related technology
Author :
Kishino, Katsumi
Author_Institution :
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo
Abstract :
Self-assembled InGaN nanocolumn LEDs emitting from ultraviolet to red were fabricated on n-type (111) Si substrates by rf-MBE. To achieve homogenization of nanocolumns, Ti-mask selective area growth was developed to fabricate uniform arrays of GaN nanocolumns.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; self-assembly; wide band gap semiconductors; GaN; InGaN; nanocolumn emitters; self-assembled nanocolumn LED; Fabrication; Fluctuations; Gallium nitride; Glass; Light emitting diodes; Molecular beam epitaxial growth; Nanotechnology; Nitrogen; Self-assembly; Substrates;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634458
