A modular approach for high Q microwave CMOS active inductor design

Author

Chiang, K.H. ; Chiang, K.V. ; Lam, K.F. ; Choi, W.W. ; Tam, K.W. ; Martins, Rui

Author_Institution

Fac. of Sci. & Technol., Macau Univ., China

Volume

1

fYear

2000

fDate

2000

Firstpage

41

Abstract

In this paper, a modular approach for the L-band CMOS Active Inductor (AI) is proposed and designed based upon a connection in series of conventional low Q-factor gyrator-C basic cells. The Q-factor can then be tuned by the number of AI cells in order to offer simplicity in terms of pole/zero cancellation, while maintaining in each gyrator-C inductor cell low values of Q. In order to demonstrate the proposed architecture´s usefulness, a prototype L-band active inductor is designed in a 0.6 μm CMOS process. The simulated results show that a high Q value of 972 is obtained at 2 GHz and an average Q-factor value of 200 is also achieved in the frequency range of 1-2 GHz

Keywords

CMOS analogue integrated circuits; Q-factor; UHF integrated circuits; active networks; field effect MMIC; gyrators; inductors; integrated circuit design; poles and zeros; 0.6 micron; 1 to 2 GHz; L-band inductor; high-Q active inductor design; low Q-factor gyrator-C basic cells; microwave CMOS active inductor design; modular approach; pole/zero cancellation; Active inductors; Artificial intelligence; CMOS technology; Frequency; Impedance; L-band; Mobile communication; Poles and zeros; Prototypes; Q factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on

Conference_Location

Jounieh

Print_ISBN

0-7803-6542-9

Type

conf

DOI

10.1109/ICECS.2000.911480

Filename

911480