DocumentCode
2965402
Title
Fabrication and characteristics of hydrogen sensors based on porous SiC for harsh environments
Author
Kim, Kang-San ; Chung, Gwiy-Sang
Author_Institution
Sch. of Electr. Eng., Univ. of Ulsan, Ulsan, South Korea
fYear
2011
fDate
28-31 Oct. 2011
Firstpage
1010
Lastpage
1013
Abstract
Porous 3C-SiC (pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC film by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd nanoparticles as a hydrogen catalyst. In this work, two kinds of hydrogen sensors are employed for high temperature application. The variations of the electrical resistance and current in the presence of nitrogen diluted with hydrogen demonstrated that Pd deposited pSiC samples have the ability to detect hydrogen at high temperatures.
Keywords
anodisation; electrochemistry; gas sensors; nanoparticles; porous materials; silicon compounds; surface treatment; chemical modification; electrochemical anodization; harsh environments; hydrogen sensors; porous SiC; Gas detectors; Schottky diodes; Sensor phenomena and characterization; Temperature; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2011 IEEE
Conference_Location
Limerick
ISSN
1930-0395
Print_ISBN
978-1-4244-9290-9
Type
conf
DOI
10.1109/ICSENS.2011.6126945
Filename
6126945
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