• DocumentCode
    2965402
  • Title

    Fabrication and characteristics of hydrogen sensors based on porous SiC for harsh environments

  • Author

    Kim, Kang-San ; Chung, Gwiy-Sang

  • Author_Institution
    Sch. of Electr. Eng., Univ. of Ulsan, Ulsan, South Korea
  • fYear
    2011
  • fDate
    28-31 Oct. 2011
  • Firstpage
    1010
  • Lastpage
    1013
  • Abstract
    Porous 3C-SiC (pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC film by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd nanoparticles as a hydrogen catalyst. In this work, two kinds of hydrogen sensors are employed for high temperature application. The variations of the electrical resistance and current in the presence of nitrogen diluted with hydrogen demonstrated that Pd deposited pSiC samples have the ability to detect hydrogen at high temperatures.
  • Keywords
    anodisation; electrochemistry; gas sensors; nanoparticles; porous materials; silicon compounds; surface treatment; chemical modification; electrochemical anodization; harsh environments; hydrogen sensors; porous SiC; Gas detectors; Schottky diodes; Sensor phenomena and characterization; Temperature; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2011 IEEE
  • Conference_Location
    Limerick
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-9290-9
  • Type

    conf

  • DOI
    10.1109/ICSENS.2011.6126945
  • Filename
    6126945