DocumentCode
2965430
Title
Coalescence overgrowth of GaN nanocolumns
Author
Tang, Tsung-Yi ; Shiao, Wen-Yu ; Chen, Yung-Sheng ; Averett, Kent L. ; Albrecht, John D. ; Yang, C.C.
Author_Institution
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
125
Lastpage
126
Abstract
Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
Keywords
III-V semiconductors; MOCVD; X-ray diffraction; gallium compounds; nanostructured materials; nanotechnology; semiconductor growth; wide band gap semiconductors; GaN; coalescence overgrowth; crystal qualities; depth-dependent X-ray diffraction; metalorganic chemical vapor deposition; nanocolumns; optical qualities; sapphire substrates; Chemical vapor deposition; Gallium nitride; MOCVD; Molecular beam epitaxial growth; Nitrogen; Plasma temperature; Scanning electron microscopy; Substrates; Surface morphology; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634477
Filename
4634477
Link To Document