Title :
Distributed Amplifier with Narrowband Amplifier Efficiency
Author :
Olson, Scott ; Thompson, Bruce ; Stengel, Bob
Author_Institution :
Motorola Labs, Plantation
Abstract :
A fully integrated tapered output line distributed cascode SiGe HBT amplifier is presented which presents an identical load to each transistor. A nodal analysis of currents in the output transmission line gives insight into the often assumed efficiency/bandwidth trade-off of a distributed amplifier. The four section one half watt amplifier with 50 Omega input and output exhibits a gain of 21 dB from 100 to 800 MHz with a saturated collector efficiency of 79% at 100 MHz.
Keywords :
Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; VHF amplifiers; bipolar integrated circuits; distributed amplifiers; heterojunction bipolar transistors; SiGe; cascode HBT amplifier; collector efficiency; efficiency 79 percent; frequency 100 MHz to 800 MHz; gain 21 dB; heterojunction bipolar transistors; integrated tapered output line distributed amplifier; narrowband amplifier; nodal analysis; Bandwidth; Capacitance; Distributed amplifiers; Heterojunction bipolar transistors; Impedance; Narrowband; Power amplifiers; Power transmission lines; Radio frequency; Radiofrequency amplifiers; Bipolar transistor amplifiers; distributed amplifiers (DA); heterojunction bipolar transistors (HBT); power amplifiers;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380313
