Title :
Effect of inhomogeneous broadening and injection level on gain recovery of quantum dot semiconductor optical amplifiers
Author :
Xiao, Jin-Long ; Huang, Yong-Zhen ; Yang, Yue-De
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Abstract :
Numerical simulation of rate equations for QD SOAs under the injection of double sub-picosecond optical pulses shows that gain recovery has two fast time constants corresponding to carrier relaxations to ground and excited states.
Keywords :
amplification; excited states; ground states; high-speed optical techniques; quantum dot lasers; semiconductor optical amplifiers; QD SOAs; carrier relaxations; double sub-picosecond optical pulses; excited state; gain recovery; ground state; inhomogeneous broadening; injection level; numerical simulation; quantum dot semiconductor optical amplifiers; rate equations; time constants; Energy capture; Energy states; Equations; Integrated optoelectronics; Laboratories; Numerical simulation; Optical pulses; Quantum dots; Semiconductor optical amplifiers; Stationary state;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634478
