DocumentCode
2965550
Title
Relative effects of adatom diffusion and direct impingement on InP nanowires grown via MOCVD
Author
Moewe, Michael ; Chuang, Linus C. ; Dubrovskii, Vladimir ; Chang-Hasnain, Connie
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
135
Lastpage
136
Abstract
We compare InP nanowires grown by MOCVD with a growth rate model which includes both direct precursor impingement and sidewall diffusion effects. The nanowires growth is limited by direct impingement and the Gibbs-Thomson effect.
Keywords
III-V semiconductors; MOCVD; diffusion; indium compounds; semiconductor growth; semiconductor quantum wires; Gibbs-Thomson effect; InP; MOCVD; adatom diffusion; direct impingement; growth rate model; nanowires; sidewall diffusion; Chemicals; Equations; Gold; III-V semiconductor materials; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Nanowires; Physics computing; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634482
Filename
4634482
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