Title :
Simulation of active regions for GaSb-based VCSELs
Author :
Kashani-Shirazi, K. ; Bachmann, A. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Garching
Abstract :
The calculation of band structures and the carrier densities leads to new rules for the optimization of the active region in GaSb-based VCSELs emitting at 2.3 mum. The simulation was performed with Nextnano++.
Keywords :
III-V semiconductors; carrier density; gallium compounds; semiconductor lasers; surface emitting lasers; GaSb; GaSb-based VCSELs; active region; band structures; carrier densities; optimization; wavelength 2.3 mum; Charge carrier density; Current density; Diode lasers; Electromagnetic wave absorption; Electrons; Filling; Light sources; Tunable circuits and devices; Vertical cavity surface emitting lasers; Voltage;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634483
