DocumentCode :
2965594
Title :
Determination of the mosaic structure of GaN films by high resolution-ray diffraction
Author :
Li, Hongtao ; Luo, Yi ; Wang, Lai ; Xi, Guangyi ; Jiang, Yang ; Zhao, Wei ; Yanjun Hall
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
141
Lastpage :
142
Abstract :
Using Pseudo-Voigt functions instead of Gauss or Lorentz functions to fit HR-XRD curves, the widely used Williamson-Hall plot was modified. Then the mosaic structure parameters of various GaN-films were precisely determined by this method.
Keywords :
III-V semiconductors; X-ray diffraction; gallium compounds; semiconductor thin films; wide band gap semiconductors; GaN; HR-XRD curves; Williamson-Hall plot; films; high resolution X-ray diffraction; mosaic structure; pseudoVoigt functions; Diffraction; Gallium nitride;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634485
Filename :
4634485
Link To Document :
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