Title :
Growth of InAs/Sb:GaAs quantum dots on silicon emitting at 1.3 μm
Author :
Rajesh, M. ; Lin Li ; Guimard, D. ; Arakawa, Yasuhiko
Author_Institution :
RCAST, Univ. of Tokyo, Tokyo
Abstract :
We report the growth of self-organized InAs/Sb:GaAs quantum dots (QDs) on silicon (Si) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). High density QDs aligned along [0-11] direction was obtained. These QDs exhibit ground state emission at 1.3 mum at room temperature (RT).
Keywords :
III-V semiconductors; MOCVD coatings; antimony; gallium arsenide; indium alloys; self-assembly; semiconductor quantum dots; InAs-Sb:GaAs; MOCVD; self organized quantum dots; semiconductor quantum dots; Chemical vapor deposition; Gallium arsenide; Land surface temperature; Light sources; MOCVD; Optical interconnections; Organic chemicals; Quantum dots; Silicon; Stationary state;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634487
