Title :
Self-assembled GaInNAs quantum dot by MOCVD
Author :
Suzuki, Ryoichiro ; Sengoku, Tomoyuki ; Nemoto, Kosuke ; Tanabe, Satoru ; Miyamoto, Tomoyuki
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama
Abstract :
MOCVD grown self-assembled quantum dot using dilute nitrogen material system (GaInNAs) is presented for GaAs-based long wavelength VCSELs. Suppression of Coalescence and inhomogeneous broadening by incorporating nitrogen into dot structure is particularly discussed.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; semiconductor growth; semiconductor quantum dots; GaInNAs; MOCVD; coalescence; dot structure; inhomogeneous broadening; nitrogen; self-assembled quantum dot; Atom optics; Buffer layers; Gallium arsenide; MOCVD; Nitrogen; Optical materials; Optical surface waves; Quantum dot lasers; Quantum dots; Vertical cavity surface emitting lasers;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634489
