• DocumentCode
    2965632
  • Title

    Self-assembled GaInNAs quantum dot by MOCVD

  • Author

    Suzuki, Ryoichiro ; Sengoku, Tomoyuki ; Nemoto, Kosuke ; Tanabe, Satoru ; Miyamoto, Tomoyuki

  • Author_Institution
    Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    153
  • Lastpage
    154
  • Abstract
    MOCVD grown self-assembled quantum dot using dilute nitrogen material system (GaInNAs) is presented for GaAs-based long wavelength VCSELs. Suppression of Coalescence and inhomogeneous broadening by incorporating nitrogen into dot structure is particularly discussed.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; semiconductor growth; semiconductor quantum dots; GaInNAs; MOCVD; coalescence; dot structure; inhomogeneous broadening; nitrogen; self-assembled quantum dot; Atom optics; Buffer layers; Gallium arsenide; MOCVD; Nitrogen; Optical materials; Optical surface waves; Quantum dot lasers; Quantum dots; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634489
  • Filename
    4634489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2965632