Title :
Hydrogen gas sensors based on thermally evaporated nanostructured MoO3 Schottky diode: A comparative study
Author :
Shafiei, M. ; Yu, J. ; Breedon, M. ; Motta, N. ; Wu, Q. ; Hu, Z. ; Qian, L. ; Kalantar-Zadeh, K. ; Wlodarski, W.
Author_Institution :
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia
Abstract :
In this paper, a comparative study of Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors is presented. MoO3 nanostructured films with three different morphologies (nanoplatelets, nanoplatelets-nanowires and nano-flowers) were deposited on SiC by thermal evaporation. We compare the current-voltage characteristics and the dynamic response of these sensors as they are exposed to hydrogen gas at temperatures up to 250°C. Results indicate that the sensor based on MoO3 nano-flowers exhibited the highest sensitivity (in terms of a 5.79V voltage shift) towards 1% hydrogen; while the sensor based on MoO3 nanoplatelets showed the quickest response (t90%-40s).
Keywords :
Schottky diodes; dynamic response; gas sensors; hydrogen; molybdenum compounds; nanosensors; nanowires; platinum; silicon compounds; thin film sensors; wide band gap semiconductors; H2; Pt-MoO3-SiC; current-voltage characteristic; dynamic response; gas sensor; nanoflower morphology; nanoplatelet morphology; nanoplatelet-nanowire morphology; nanostructured film; thermally evaporated nanostructured Schottky diode; voltage 5.79 V; Gas detectors; Morphology; Nanostructures; Schottky diodes; Sensor phenomena and characterization; Temperature sensors;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6126970
