Title :
Complementary bipolar devices for base station applications
Author :
Tiiliharju, Esa ; Pellikka, Harri
Author_Institution :
Turku Univ., Turku
Abstract :
A high dynamic range (DR) current reuse mixer and a linear push-pull buffer with an active area of 0.11 mm times 0.1 mm were realized for base station applications in a 5-V complementary 0.4-mum SiGe process. At 2 GHz, a test block with the proposed mixer achieves a nominal measured DR of +154 dB, while drawing 29 mA from a 3.3-V supply, whereas the push-pull buffer outputs an OP1dB of +9 dBm, while drawing 33 mA from a 5-V supply.
Keywords :
Ge-Si alloys; UHF integrated circuits; UHF mixers; bipolar analogue integrated circuits; buffer circuits; mobile radio; SiGe; base station application; bipolar analog integrated circuits; complementary bipolar devices; current 29 mA; current 33 mA; dynamic range current reuse mixer; frequency 2 GHz; linear push-pull buffer; microwave mixers; size 0.4 mum; voltage 3.3 V; voltage 5 V; Base stations; Baseband; Bills of materials; CMOS technology; Germanium silicon alloys; Laboratories; Peak to average power ratio; Power generation; Silicon germanium; Silicon on insulator technology; Bipolar analog integrated circuits; Buffer circuits; Microwave mixers;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380378
