• DocumentCode
    2966006
  • Title

    InAsxP1−x nanowire heterostructures

  • Author

    Crankshaw, S. ; Chuang, L.C. ; Moewe, M. ; Chang-Hasnain, Constance

  • Author_Institution
    Appl. Sci.&Technol. Group, Univ. of California, Berkeley, CA
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    201
  • Lastpage
    202
  • Abstract
    Optical characterization of InP / InAsxP1-x / InP heterostructures demonstrates that we have grown nanowire heterostructures via MOCVD. Temperature-dependent photoluminescence spectra reveal emission from distinct subbands of the InAsxP1-x material.
  • Keywords
    III-V semiconductors; MOCVD; arsenic compounds; indium compounds; nanowires; photoluminescence; InP-InAsP; MOCVD; nanowire heterostructures; temperature-dependent photoluminescence; Indium phosphide; MOCVD; Optical computing; Optical materials; Photoluminescence; Photonic band gap; Scanning electron microscopy; Stimulated emission; Substrates; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634510
  • Filename
    4634510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2966006