DocumentCode :
2966006
Title :
InAsxP1−x nanowire heterostructures
Author :
Crankshaw, S. ; Chuang, L.C. ; Moewe, M. ; Chang-Hasnain, Constance
Author_Institution :
Appl. Sci.&Technol. Group, Univ. of California, Berkeley, CA
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
201
Lastpage :
202
Abstract :
Optical characterization of InP / InAsxP1-x / InP heterostructures demonstrates that we have grown nanowire heterostructures via MOCVD. Temperature-dependent photoluminescence spectra reveal emission from distinct subbands of the InAsxP1-x material.
Keywords :
III-V semiconductors; MOCVD; arsenic compounds; indium compounds; nanowires; photoluminescence; InP-InAsP; MOCVD; nanowire heterostructures; temperature-dependent photoluminescence; Indium phosphide; MOCVD; Optical computing; Optical materials; Photoluminescence; Photonic band gap; Scanning electron microscopy; Stimulated emission; Substrates; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634510
Filename :
4634510
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2966006
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