• DocumentCode
    2966012
  • Title

    Room-temperature direct bonding for integrated optical devices

  • Author

    Takei, Ryohei ; Abe, Kenji ; Mizumoto, Tetsuya

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    203
  • Lastpage
    204
  • Abstract
    We report a room-temperature direct bonding techniques for water combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This techniques is versatile for integrated optical devices that are composed of different crystals.
  • Keywords
    bonding processes; cerium; indium compounds; integrated optics; lithium compounds; optical materials; silicon compounds; yttrium compounds; InP-(YIG:Ce); Si-InP; Si-LiNbO3; integrated optical devices; room-temperature direct bonding techniques; temperature 293 K to 298 K; water combination; High speed optical techniques; III-V semiconductor materials; Indium phosphide; Integrated optics; Optical devices; Optical waveguides; Plasma temperature; Stimulated emission; Thermal stresses; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634511
  • Filename
    4634511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2966012