WE1A: Power Characteristics and Performance Enhancement Techniques for III-V and Silicon Based Devices

fYear

2007

fDate

3-8 June 2007

Firstpage

301

Lastpage

301

Keywords

III-V semiconductor materials; Laboratories; Robustness; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI, USA

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380411

Filename

4263806

Link To Document