DocumentCode :
2966113
Title :
Surface Acoustic Wave sensor based on AlN/Sapphire structure for high temperature and high frequency applications
Author :
Blampain, E. ; Elmazria, O. ; Aubert, T. ; Assouar, B. ; Legrani, O.
Author_Institution :
Inst. Jean Lamour (IJL), Nancy Univ., Vandoeuvre lès Nancy, France
fYear :
2011
fDate :
28-31 Oct. 2011
Firstpage :
610
Lastpage :
613
Abstract :
In this work, the performance of AlN/Sapphire structure in high frequencies is investigated. Several SAW devices were performed with various designs (gap, wavelength, metallization ratio, ...) to study simultaneously different parameters (acoustic velocity, electromechanical coupling (K2), acoustic propagation loss (α), TCF) versus frequency and temperature. Experimental results showed that as expected, a increases with temperature while K2 is enhanced at high temperatures. Due to the antagonistic evolution of these two parameters, insertion loss decreases or increases as function of the gap. We also evidenced that this structure allows fabrication of devices operating up to 1.5 GHz and that the frequency varies linearly with temperature.
Keywords :
III-V semiconductors; aluminium compounds; sapphire; surface acoustic wave sensors; wide band gap semiconductors; AlN-Al2O3; K2 parameter; SAW sensor; TCF parameter; acoustic propagation loss parameter; acoustic velocity parameter; electromechanical coupling parameter; insertion loss; surface acoustic wave sensor; Insertion loss; Loss measurement; Propagation losses; Surface acoustic waves; Temperature; Temperature measurement; Temperature sensors; AlN; High temperature; SAW sensor; Sapphire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
ISSN :
1930-0395
Print_ISBN :
978-1-4244-9290-9
Type :
conf
DOI :
10.1109/ICSENS.2011.6126984
Filename :
6126984
Link To Document :
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