Robustness of GaAs Field Plate Based MESFETs

Author

Winslow, Thomas A.

Author_Institution

Principal Eng. with M/A-COM/Tyco Electron., Roanoke

fYear

2007

fDate

3-8 June 2007

Firstpage

315

Lastpage

318

Abstract

High voltage, field plate based GaAs MESFETs have great potential for providing high performance MMICs with low cost, high reliability, and immediate production capability required by today´s applications. With high voltage operation comes the potential under nonideal operating conditions for premature burnout. Robustness becomes a serious concern for any high voltage application. High Voltage MSAG^TM (HVMSAG^TM) MESFETs exhibit high reliability and excellent robustness against 10:1 VSWR load mismatches at 30V when junction temperatures are restricted to less than 350degC. Void free die attach and low MESFET thermal resistance are important factors for enhancing device robustness.

Keywords

MESFET integrated circuits; field effect MMIC; gallium arsenide; integrated circuit reliability; thermal resistance; GaAs; HVMSAG process; MMIC; VSWR load mismatch; device reliability; device robustness; field plate based MESFET; high voltage MSAG MESFET; nonideal operating condition; premature burnout; thermal resistance; void free die attach; voltage 30 V; Costs; Gallium arsenide; MESFETs; MMICs; Microassembly; Production; Robustness; Temperature; Thermal resistance; Voltage; Field plate; MESFET; high voltage; reliability; robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380415

Filename

4263810