DocumentCode :
2966140
Title :
Robustness of GaAs Field Plate Based MESFETs
Author :
Winslow, Thomas A.
Author_Institution :
Principal Eng. with M/A-COM/Tyco Electron., Roanoke
fYear :
2007
fDate :
3-8 June 2007
Firstpage :
315
Lastpage :
318
Abstract :
High voltage, field plate based GaAs MESFETs have great potential for providing high performance MMICs with low cost, high reliability, and immediate production capability required by today´s applications. With high voltage operation comes the potential under nonideal operating conditions for premature burnout. Robustness becomes a serious concern for any high voltage application. High Voltage MSAGTM (HVMSAGTM) MESFETs exhibit high reliability and excellent robustness against 10:1 VSWR load mismatches at 30V when junction temperatures are restricted to less than 350degC. Void free die attach and low MESFET thermal resistance are important factors for enhancing device robustness.
Keywords :
MESFET integrated circuits; field effect MMIC; gallium arsenide; integrated circuit reliability; thermal resistance; GaAs; HVMSAG process; MMIC; VSWR load mismatch; device reliability; device robustness; field plate based MESFET; high voltage MSAG MESFET; nonideal operating condition; premature burnout; thermal resistance; void free die attach; voltage 30 V; Costs; Gallium arsenide; MESFETs; MMICs; Microassembly; Production; Robustness; Temperature; Thermal resistance; Voltage; Field plate; MESFET; high voltage; reliability; robustness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
ISSN :
0149-645X
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2007.380415
Filename :
4263810
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2966140
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