Title :
A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator
Author :
Wanner, Robert ; Lachner, Rudolf ; Olbrich, Gerhard R. ; Russer, Peter
Author_Institution :
Tech. Univ. Miinchen, Munich
Abstract :
In this paper we present a fully monolithically integrated J-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. The passive circuitry is realized by integrated transmission-line components, MIM-capacitors and TaN resistors. The frequency of the output signal can be tuned between 275.5 GHz and 279.6 GHz. This oscillator gives the highest output frequency for transistor based oscillators published up to now.
Keywords :
Ge-Si alloys; MIMIC; bipolar integrated circuits; millimetre wave oscillators; passive networks; MIM-capacitors; SiGe; frequency 200 GHz; frequency 275 GHz; maximum transit frequency; monolithically integrated push-push oscillator; oscillation frequency; passive circuitry; production-near bipolar technology; transistor based oscillators; transmission-line components; Circuits; Frequency; Germanium silicon alloys; Impedance; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Oscillators; Phase noise; Silicon germanium;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380420
