A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator

Author

Wanner, Robert ; Lachner, Rudolf ; Olbrich, Gerhard R. ; Russer, Peter

Author_Institution

Tech. Univ. Miinchen, Munich

fYear

2007

fDate

3-8 June 2007

Firstpage

333

Lastpage

336

Abstract

In this paper we present a fully monolithically integrated J-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f_T = 200 GHz and a maximum frequency of oscillation f_max = 275 GHz. The passive circuitry is realized by integrated transmission-line components, MIM-capacitors and TaN resistors. The frequency of the output signal can be tuned between 275.5 GHz and 279.6 GHz. This oscillator gives the highest output frequency for transistor based oscillators published up to now.

Keywords

Ge-Si alloys; MIMIC; bipolar integrated circuits; millimetre wave oscillators; passive networks; MIM-capacitors; SiGe; frequency 200 GHz; frequency 275 GHz; maximum transit frequency; monolithically integrated push-push oscillator; oscillation frequency; passive circuitry; production-near bipolar technology; transistor based oscillators; transmission-line components; Circuits; Frequency; Germanium silicon alloys; Impedance; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Oscillators; Phase noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380420

Filename

4263815