DocumentCode :
2966236
Title :
808 nm GaAsP/GaInP laser diode arrays grown by MOCVD using AsH3 and TBP
Author :
Zhong, Li ; Ma, Xiaoyu ; Wang, Shutang ; Liu, Suping
Author_Institution :
Nat. Eng. Res. Center for Optoelectron. Devices, Chinese Acad. of Sci., Beijing
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
237
Lastpage :
238
Abstract :
The combination of AsH3 and TBP have been used as group V precursors in the MOCVD growth of GaAsP single quantum well (SQW) layers. The optical and electrical characteristics of GaAsP/GaInP QW laser diode arrays have been demonstrated.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor laser arrays; semiconductor quantum wells; GaAsP-GaInP; MOCVD; electrical characteristics; laser diode arrays; optical characteristics; single quantum well layers; wavelength 808 nm; Ash; Diode lasers; MOCVD; Optical arrays; Optical pumping; Optoelectronic devices; Power generation; Semiconductor laser arrays; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634525
Filename :
4634525
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2966236
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